MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg 0.03 Zn 0.97 O (MZO) semiconductor served as the channel layer and ferroelectric Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO)...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2021, Vol.9, p.798-803
Main Authors: Yu, Fangzhou, Hong, Wen-Chiang, Li, Guangyuan, Li, Yuxuan, Lu, Ming, Lu, Yicheng
Format: Article
Language:English
Subjects:
Augmented reality
Capacitance
Eyewear
Ferroelectric materials
Ferroelectricity
Glass
Logic gates
Negative capacitance
Nickel
Semiconductor devices
Substrates
subthreshold swing
Thin film transistors
thin-film transistor
Transistors
transparent electronics
Visible spectrum
Zinc
Zinc oxide
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Summary:We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg 0.03 Zn 0.97 O (MZO) semiconductor served as the channel layer and ferroelectric Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2021.3108904