Influence of Heat Treatments in H2 and Ar on the E1 center in β-Gs2O3

The influence of heat treating [Formula: see text]-type bulk [Formula: see text]-Ga[Formula: see text]O[Formula: see text] in hydrogen (H[Formula: see text]) and argon (Ar) gases on the presence of the defect level commonly labeled as [Formula: see text] was studied. Fourier transform-infrared spect...

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Bibliographic Details
Published in:Journal of applied physics 2022-03, Vol.131 (11)
Main Authors: Langorgen, Amanda, Zimmerman, Christen, Frodason, Ymir Kalmann, Verhoeven, Espen Fordestrom, Weiser, Philip Michael, Karsthof, Robert Michael, Varley, Joel Basile, Vines, Lasse
Format: Article
Language:English
Subjects:
annealing
crystalline solids
deep level transient spectroscopy
Fourier transform spectroscopy
hybrid density functional calculations
materials properties
MATERIALS SCIENCE
oxides
Schottky capacitance spectroscopy
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Summary:The influence of heat treating [Formula: see text]-type bulk [Formula: see text]-Ga[Formula: see text]O[Formula: see text] in hydrogen (H[Formula: see text]) and argon (Ar) gases on the presence of the defect level commonly labeled as [Formula: see text] was studied. Fourier transform-infrared spectroscopy confirms that hydrogen (H) is incorporated into [Formula: see text]-Ga[Formula: see text]O[Formula: see text] during H[Formula: see text] annealing at 900 °C. Deep-level transient spectroscopy measurements reveal that the concentration of the [Formula: see text] level is promoted by the introduction of H, in contrast to what is observed in samples heat-treated in an Ar flow. We further find the [Formula: see text] level to be stable against heat treatments at 650 K, both with and without an applied reverse-bias voltage. Potential candidates for the defect origin of [Formula: see text] are investigated using hybrid-functional calculations, and three types of defect complexes involving H are found to exhibit charge-state transition levels compatible with [Formula: see text], including substitutional H at one of the threefold coordinated O sites, Ga-substitutional shallow donor impurities passivated by H, and certain configurations of singly hydrogenated Ga–O divacancies. Among these types, only the latter exhibit H binding energies that are consistent with the observed thermal stability of [Formula: see text].
ISSN:0021-8979
1089-7550