Ultrawide-bandgap semiconductors: An overview

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spann...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials research 2021-12, Vol.36 (23), p.4601-4615
Main Authors: Wong, Man Hoi, Bierwagen, Oliver, Kaplar, Robert J., Umezawa, Hitoshi
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied and Technical Physics
Biomaterials
Boron nitride
Chemistry and Materials Science
Crystal defects
Diamonds
Electronic devices
Emitters
Energy gap
Gallium oxides
Inorganic Chemistry
Materials Engineering
Materials research
MATERIALS SCIENCE
Nanotechnology
Optoelectronic devices
Overview
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. This focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al x Ga 1– x N), boron nitride (BN), diamond, β -phase gallium oxide ( β -Ga 2 O 3 ), and a number of other UWBG binary and ternary oxides. Graphical Abstract
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-021-00458-1