Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon

Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectri...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2018-08, Vol.10 (30), p.25529-25535
Main Authors: Lyu, Jike, Estandía, Saúl, Gazquez, Jaume, Chisholm, Matthew F, Fina, Ignasi, Dix, Nico, Fontcuberta, Josep, Sánchez, Florencio
Format: Article
Language:English
Subjects:
barium titanate
dipoles maps
epitaxial oxides on silicon
ferroelectric oxides
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
pulsed laser deposition
strain engineering
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Summary:Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b07778