Homogeneous CuGaSe2 growth by the CuPRO process with In-Situ AgBr treatment

•In-situ AgBr treatment used to deposit homogeneous CuGaSe2 material.•CuGaSe2 deposition time reduced by nearly half.•Higher and more consistent open-circuit voltage and fill factor for devices. Homogeneous CuGaSe2 thin film growth is limited by slow kinetics of formation. A modified growth process...

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Bibliographic Details
Published in:Thin solid films 2022-11, Vol.762 (C), p.139488, Article 139488
Main Authors: Palmiotti, Elizabeth, Tsoulka, Polyxeni, Poudel, Deewakar, Marsillac, Sylvain, Barreau, Nicolas, Rockett, Angus, Lepetit, Thomas
Format: Article
Language:English
Subjects:
Co-Evaporation
Copper Gallium Diselenide
In-Situ Treatment
Solar Cell
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Summary:•In-situ AgBr treatment used to deposit homogeneous CuGaSe2 material.•CuGaSe2 deposition time reduced by nearly half.•Higher and more consistent open-circuit voltage and fill factor for devices. Homogeneous CuGaSe2 thin film growth is limited by slow kinetics of formation. A modified growth process was previously developed to address this issue but requires two separate long, high temperature anneals. Here, we demonstrate that a short AgBr treatment can replace this modified growth process. The AgBr works as a transport agent to catalyze CuGaSe2 formation and atomic mobility. This treatment results in large grains with homogeneous composition through the bulk. Solar cells made with this material show better performance.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2022.139488