Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the b...

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Bibliographic Details
Published in:Physical review letters 2021-10, Vol.127 (18), p.186401-186401, Article 186401
Main Authors: Huang, Shenyang, Lu, Yang, Wang, Fanjie, Lei, Yuchen, Song, Chaoyu, Zhang, Jiasheng, Xing, Qiaoxia, Wang, Chong, Xie, Yuangang, Mu, Lei, Zhang, Guowei, Yan, Hao, Chen, Bin, Yan, Hugen
Format: Article
Language:English
Subjects:
2-dimensional systems
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electronic structure
infrared spectroscopy
Interlayers
Morse potential
Phosphorus
Physics
Pressure dependence
Pressure effects
Raman spectroscopy
tight-binding model
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Summary:Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼ 1.8 GPa , the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.127.186401