Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset

Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub 0.5}Sr{sub 0.5}= CoO{sub 3} ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth proces...

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Bibliographic Details
Published in:Applied physics letters 2000-07, Vol.77 (1)
Main Authors: Friessnegg, T., Aggarwal, S., Ramesh, R., Nielsen, B., Poindexter, E. H., Keeble, D. J.
Format: Article
Language:English
Subjects:
CAPACITORS
COBALT OXIDES
CRYSTAL DEFECTS
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
HYSTERESIS
LANTHANUM OXIDES
LEAD OXIDES
MATERIALS SCIENCE
MEMORY DEVICES
STRONTIUM OXIDES
THIN FILMS
TITANIUM OXIDES
VACANCIES
ZIRCONIUM OXIDES
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Summary:Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub 0.5}Sr{sub 0.5}= CoO{sub 3} ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. (c) 2000 American Institute of Physics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126898