Lateral n - p junction for acoustoelectric nanocircuits

We report the experimental realization of a device comprising a lateral n - p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of l...

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Bibliographic Details
Published in:Applied physics letters 2004-07, Vol.85 (3), p.491-493
Main Authors: Hosey, T., Talyanskii, V., Vijendran, S., Jones, G. A. C., Ward, M. B., Unitt, D. C., Norman, C. E., Shields, A. J.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
CHARGE TRANSPORT
GALLIUM ARSENIDES
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTON EMISSION
SEMICONDUCTOR MATERIALS
SOUND WAVES
TRANSDUCERS
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Summary:We report the experimental realization of a device comprising a lateral n - p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of light-emitting diode is suitable for integration into acoustoelectric nanocircuits in which quasione-dimensional semiconductor channels serve as "wires" through which packets of charge are transported by surface acoustic waves. The diode provides a means by which to extend the functionality of acoustoelectric nanocircuits into the optical domain.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1773363