Lateral n - p junction for acoustoelectric nanocircuits

We report the experimental realization of a device comprising a lateral n - p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of l...

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Published in:Applied physics letters 2004-07, Vol.85 (3), p.491-493
Main Authors: Hosey, T., Talyanskii, V., Vijendran, S., Jones, G. A. C., Ward, M. B., Unitt, D. C., Norman, C. E., Shields, A. J.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
CHARGE TRANSPORT
GALLIUM ARSENIDES
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTON EMISSION
SEMICONDUCTOR MATERIALS
SOUND WAVES
TRANSDUCERS
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cited_by cdi_FETCH-LOGICAL-c367t-63b7f235916209b6ee0d73d32dbb73e2951ed1d934367f9e5a62d8f7d56d7d3
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container_end_page 493
container_issue 3
container_start_page 491
container_title Applied physics letters
container_volume 85
creator Hosey, T.
Talyanskii, V.
Vijendran, S.
Jones, G. A. C.
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Norman, C. E.
Shields, A. J.
description We report the experimental realization of a device comprising a lateral n - p junction grown by focused-ion molecular-beam epitaxy and a transducer to generate a surface acoustic wave. Acoustic charge transport across the junction and the accompanying photon emission are demonstrated. This type of light-emitting diode is suitable for integration into acoustoelectric nanocircuits in which quasione-dimensional semiconductor channels serve as "wires" through which packets of charge are transported by surface acoustic waves. The diode provides a means by which to extend the functionality of acoustoelectric nanocircuits into the optical domain.
doi_str_mv 10.1063/1.1773363
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ispartof Applied physics letters, 2004-07, Vol.85 (3), p.491-493
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
subjects ALUMINIUM COMPOUNDS
CHARGE TRANSPORT
GALLIUM ARSENIDES
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTON EMISSION
SEMICONDUCTOR MATERIALS
SOUND WAVES
TRANSDUCERS
title Lateral n - p junction for acoustoelectric nanocircuits
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