Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

We report on experiments on photoresponse to sub-THz ( 120 GHz ) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300 K . The observed photoresponse is in agreement with predictions of the Dyakonov-Shur plasma wave detection theory. This is experimental ev...

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Bibliographic Details
Published in:Applied physics letters 2004-07, Vol.85 (4), p.675-677
Main Authors: Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., Skotnicki, T., Maude, D., Rumyantsev, S., Shur, M. S.
Format: Article
Language:English
Subjects:
FIELD EFFECT TRANSISTORS
GHZ RANGE 100-1000
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
NANOSTRUCTURES
PLASMA WAVES
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
THZ RANGE
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Summary:We report on experiments on photoresponse to sub-THz ( 120 GHz ) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300 K . The observed photoresponse is in agreement with predictions of the Dyakonov-Shur plasma wave detection theory. This is experimental evidence of the plasma wave detection by silicon FETs. The plasma wave parameters deduced from the experiments allow us to predict the nonresonant and resonant detection in THz range by nanometer size silicon devices-operating at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1775034