Fabrication and properties of nanoporous GaN films

Nanopore arrays with pore diameters of approximately 75 nm were fabricated in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anod...

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Bibliographic Details
Published in:Applied physics letters 2004-08, Vol.85 (5), p.816-818
Main Authors: Wang, Y. D., Chua, S. J., Sander, M. S., Chen, P., Tripathy, S., Fonstad, C. G.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
ANODIZATION
ATOMIC FORCE MICROSCOPY
CARBON TETRAFLUORIDE
CHEMICAL VAPOR DEPOSITION
ETCHING
FABRICATION
GALLIUM NITRIDES
MATERIALS SCIENCE
NANOSTRUCTURES
PERIODICITY
PHOTOLUMINESCENCE
PLASMA
POROUS MATERIALS
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
THIN FILMS
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Summary:Nanopore arrays with pore diameters of approximately 75 nm were fabricated in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF 4 -based plasma conditions. Scanning electron microscopy analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy, photoluminescence, and micro-Raman techniques were employed to assess the etched GaN nanopore surface. This cost-effective, nonlithographic method to produce nano-patterned GaN templates is expected to be useful for growth and fabrication of nitride-based nanostructures and photonic band gap materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1774273