Enhanced Curie temperature of InMnP:Zn--T{sub C}{approx}300 K

• Published in: Applied physics letters 2004-09, Vol.85 (10)
• Main Authors: Shon, Yoon, Jeon, H.C., Park, Y.S., Lee, W.C., Lee, Seung Joo, Kim, D.Y., Kim, H.S., Kim, H.J., Kang, T.W., Park, Y.J., Yoon, Chong S., Chung, K.S., Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Department of Electric Engineering, Kyunghee University, Suwon 449-701
• Format: Article
• Language: English
• Subjects: CHEMICAL ANALYSIS; CRYSTAL GROWTH; CURIE POINT; CZOCHRALSKI METHOD; DOPED MATERIALS; EV RANGE 01-10; EVAPORATION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HEAT TREATMENTS; HYSTERESIS; INDIUM PHOSPHIDES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETOMETERS; MANGANESE COMPOUNDS; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SQUID DEVICES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THERMAL DIFFUSION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY; ZINC
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1790074

P-type bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently diffused with Mn by heat treatment after the evaporation of Mn on top of InP:Zn using a molecular beam epitaxy system. The characteristics of Mn-diffused InMnP:Zn were investigated by an energy dispersive x-ray spectroscopy, photoluminescence, and a superconducting quantum interference device magnetometer measurements. The samples were characterized by transmission electron microscopy and no evidence of secondary phase formation of InMnP:Zn was found. The results of energy dispersive x-ray peak displayed injected concentration of Mn near 3%. The results of photoluminescence measurement showed that optical broad transitions related to Mn appeared around 1.2 eV and it was confirmed that the transitions around 1.2 eV were Mn-related band by the diffusion of Mn into InP:Zn. Clear ferromagnetic hysteresis loops were observed at 10 and 300 K and the temperature-dependent magnetization showed ferromagnetic behavior around 300 K, which is caused by carrier-mediated ferromagnetism in InMnP:Zn. It is found that a ferromagnetic semiconductor at room temperature can be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively.