Systematic study of polarized electron emission from strained GaAs∕GaAsP superlattice photocathodes

Spin-polarized electron photoemission has been studied for GaAs∕GaAs1−xPx strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitio...

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Bibliographic Details
Published in:Applied physics letters 2004-09, Vol.85 (13), p.2640-2642
Main Authors: Maruyama, T., Luh, D.-A., Brachmann, A., Clendenin, J. E., Garwin, E. L., Harvey, S., Jiang, J., Kirby, R. E., Prescott, C. Y., Prepost, R., Moy, A. M.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON EMISSION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HOLES
LAYERS
MOLECULAR BEAM EPITAXY
PHOSPHORUS ADDITIONS
PHOTOCATHODES
PHOTOEMISSION
POLARIZATION
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SPECTRA
SPIN
SPIN ORIENTATION
STRESSES
SUPERLATTICES
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Summary:Spin-polarized electron photoemission has been studied for GaAs∕GaAs1−xPx strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1795358