Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering

We report on the growth of amorphous carbon nitride films (a-CNx) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CNx:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity...

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Bibliographic Details
Published in:Applied physics letters 2004-10, Vol.85 (14), p.2803-2805
Main Authors: Katsuno, T., Nitta, S., Habuchi, H., Stolojan, V., Silva, S. R. P.
Format: Article
Language:English
Subjects:
CARBON NITRIDES
DEPOSITION
EV RANGE 01-10
GRAPHITE
HYDROGEN
LAYERS
MATERIALS SCIENCE
MONOCHROMATIC RADIATION
NITROGEN
PHOTOCONDUCTIVE CELLS
PHOTOCONDUCTIVITY
PHOTOSENSITIVITY
RADICALS
SPUTTERING
SUBSTRATES
THIN FILMS
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Summary:We report on the growth of amorphous carbon nitride films (a-CNx) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CNx:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 105, defined as the ratio of the photoconductivity σp to the dark conductivity σd and is the highest value reported thus far. We believe that the carriers generated by the monochromatic light (photon energy 6.2eV) in the a-CNx:LL films are primarily electrons, with the photoconductivity shown to increase with substrate deposition temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1792384