High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5-15 and 20 - 50 cm 2 V − 1 s − 1 are obtained for devices post-deposition annealed at 300 and 600 ° C , respectively. TTFT...

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Bibliographic Details
Published in:Applied physics letters 2005-01, Vol.86 (1), p.013503-013503-3
Main Authors: Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., Keszler, D. A.
Format: Article
Language:English
Subjects:
ANNEALING
CATIONS
DEPOSITION
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
LAYERS
MAGNETRONS
MATERIALS SCIENCE
OPACITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TIN OXIDES
TRANSISTORS
ZINC OXIDES
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Summary:Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5-15 and 20 - 50 cm 2 V − 1 s − 1 are obtained for devices post-deposition annealed at 300 and 600 ° C , respectively. TTFTs processed at 300 and 600 ° C yield devices with turn-on voltage of 0-15 and − 5 - 5 V , respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10 7 is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with ( n − 1 ) d 10 ns 0 ( n ⩾ 4 ) electronic configurations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1843286