Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by Si H 4 + N 2 and Si H 4 + N H 3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurem...

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Bibliographic Details
Published in:Applied physics letters 2005-04, Vol.86 (14), p.143107-143107-3
Main Authors: Cho, Chang-Hee, Kim, Baek-Hyun, Kim, Tae-Wook, Park, Seong-Ju, Park, Nae-Man, Sung, Gun-Yong
Format: Article
Language:English
Subjects:
AMMONIA
CAPACITANCE
CRYSTAL GROWTH
DEPOSITION
ELECTRIC POTENTIAL
HYDROGEN
MATERIALS SCIENCE
PASSIVATION
PLASMA
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SILICON NITRIDES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by Si H 4 + N 2 and Si H 4 + N H 3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by Si H 4 + N H 3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by Si H 4 + N 2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of Si H 4 + N H 3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by N H 3 during the growth of the Si QDs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1894595