Temperature dependence of resistivity of Si–Ta film deposited by magnetron sputtering

Analysis of conductivity of silicon films doped with tantalum, based on percolation theory, has been carried out. The dependence of resistivity on Ta content in the film and temperature has been presented. The films were deposited by magnetron sputtering on glass substrates. The films with the thick...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.503-505
Main Authors: Berlicki, T. M., Prociów, E. L., Brzeziński, J., Osadnik, S. J.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GLASS
MAGNETRONS
SILICON
SPUTTERING
SURFACE COATING
TANTALUM
TEMPERATURE DEPENDENCE
THIN FILMS
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Summary:Analysis of conductivity of silicon films doped with tantalum, based on percolation theory, has been carried out. The dependence of resistivity on Ta content in the film and temperature has been presented. The films were deposited by magnetron sputtering on glass substrates. The films with the thickness of ∼ 0.3 μ m contained from 2% to 20% of Ta. Based on percolation theory, the effect of Ta content on resistivity and its dependence on temperature were determined.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1894685