Error rate of a charge qubit coupled to an acoustic phonon reservoir

We analyze decoherence of an electron in a double dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation processes, while for small tunneling rates, the virtual-phonon, depha...

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Bibliographic Details
Published in:Physical review. A, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2004-03, Vol.69 (3), Article 032311
Main Authors: Fedichkin, L., Fedorov, A.
Format: Article
Language:English
Subjects:
ATOMIC AND MOLECULAR PHYSICS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CORRECTIONS
ELECTRONS
EMISSION
ERRORS
GALLIUM ARSENIDES
INFORMATION THEORY
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
PHONONS
QUANTUM DOTS
QUANTUM MECHANICS
RELAXATION
SEMICONDUCTOR MATERIALS
TUNNEL EFFECT
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Summary:We analyze decoherence of an electron in a double dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation processes, while for small tunneling rates, the virtual-phonon, dephasing processes dominate. Our results show that in common semiconductors, such as Si and GaAs, the latter mechanism determines the upper limit for the double-dot charge qubit performance measure.
ISSN:1050-2947
1094-1622
DOI:10.1103/PhysRevA.69.032311