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Strong contributions of indirect processes to the electron-impact ionization cross section of Sc^{+} ions

We present experimental measurements and theoretical calculations for the electron-impact single ionization cross section of Sc{sup +} ions covering an energy range from threshold to 1000 eV. An electron-ion crossed-beams setup was employed for the measurements of absolute cross sections as well as...

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Bibliographic Details
Published in:Physical review. A, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2004-10, Vol.70 (4), Article 042717
Main Authors: Jacobi, J., Knopp, H., Schippers, S., Müller, A., Loch, S., Witthoeft, M., Pindzola, M., Ballance, C.
Format: Article
Language:English
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Summary:We present experimental measurements and theoretical calculations for the electron-impact single ionization cross section of Sc{sup +} ions covering an energy range from threshold to 1000 eV. An electron-ion crossed-beams setup was employed for the measurements of absolute cross sections as well as for a high-resolution energy scan to uncover fine details in the energy dependence of the cross section. Direct ionization is described by configuration-averaged distorted-wave theory and indirect ionization by R-matrix theory. Indirect processes contribute to the total ionization cross section by up to {approx}40%. This finding is related to the existence of strong 3p{yields}3d excitation channels in Sc{sup +}(3p{sup 6}3d4s). The shape of the related cross-section feature is reminiscent of the very strong 4d{yields}4f excitation, found in the ionization of xenon and its neighboring elements.
ISSN:1050-2947
1094-1622
DOI:10.1103/PhysRevA.70.042717