At-Wavelength Interferometry of High-NA Diffraction-Limited EUV Optics

Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the devel...

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Bibliographic Details
Main Authors: Goldberg, Kenneth A, Naulleau, Patrick, Rekawa, Senajith, Denham, Paul, Liddle, J Alexander, Anderson, Erik, Jackson, Keith, Bokor, Jeffrey, Attwood, David
Format: Conference Proceeding
Language:English
Subjects:
ACCURACY
ADVANCED LIGHT SOURCE
ALIGNMENT
APERTURES
BEAM OPTICS
DESIGN
DIFFRACTION
EXTREME ULTRAVIOLET RADIATION
INTERFEROMETERS
INTERFEROMETRY
MIRRORS
OPTICAL SYSTEMS
PARTICLE ACCELERATORS
RESOLUTION
SYNCHROTRON RADIATION
TESTING
WAVELENGTHS
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Summary:Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub-A-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.1757930