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At-Wavelength Interferometry of High-NA Diffraction-Limited EUV Optics
Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the devel...
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creator | Goldberg, Kenneth A Naulleau, Patrick Rekawa, Senajith Denham, Paul Liddle, J Alexander Anderson, Erik Jackson, Keith Bokor, Jeffrey Attwood, David |
description | Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub-A-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed. |
doi_str_mv | 10.1063/1.1757930 |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | ACCURACY ADVANCED LIGHT SOURCE ALIGNMENT APERTURES BEAM OPTICS DESIGN DIFFRACTION EXTREME ULTRAVIOLET RADIATION INTERFEROMETERS INTERFEROMETRY MIRRORS OPTICAL SYSTEMS PARTICLE ACCELERATORS RESOLUTION SYNCHROTRON RADIATION TESTING WAVELENGTHS |
title | At-Wavelength Interferometry of High-NA Diffraction-Limited EUV Optics |
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