Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing

Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metas...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2004-11, Vol.96 (10), p.5496-5499
Main Authors: Park, Young Min, Park, Young Ju, Kim, Kwang Moo, Song, Jin Dong, Lee, Jung II, Yoo, Keon-Ho, Kim, Hyung Seok, Park, Chan Gyung
Format: Article
Language:English
Subjects:
ANNEALING
GALLIUM ARSENIDES
INDIUM ARSENIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1805191