Raman Spectra of the Laser-Irradiated GaSe Single Crystals

The specific features of the crystal structure of the lamellar GaSe crystals of various polytypes are analyzed. The possibility of identifying the phase transitions, which occur as a result of variations in temperature, pressure, and composition, is considered from the standpoint of resonance Raman...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2005-04, Vol.39 (4), p.381
Main Authors: Baidullaeva, A., Vlasenko, Z.K., Dauletmuratov, B.K., Kuzan, L.F., Mozol', P.E.
Format: Article
Language:English
Subjects:
ANNEALING
CRYSTAL STRUCTURE
GALLIUM SELENIDES
IRRADIATION
LASER RADIATION
LASERS
MATERIALS SCIENCE
MONOCRYSTALS
PHASE TRANSFORMATIONS
RAMAN EFFECT
RAMAN SPECTRA
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
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Summary:The specific features of the crystal structure of the lamellar GaSe crystals of various polytypes are analyzed. The possibility of identifying the phase transitions, which occur as a result of variations in temperature, pressure, and composition, is considered from the standpoint of resonance Raman scattering. The effects of high-temperature thermal annealing and pulsed laser irradiation on Raman spectra is investigated. It is found that pulsed laser radiation gives rise to regions with different polytype composition and regions with residual stress.
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1900248