The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects

The results of experimental studies of the electrical and optical properties of n- and p-InAs crystals irradiated with electrons at an energy of {approx}2 MeV and doses as high as D = 1 x 10{sup 19} cm{sup -2} are reported. Specific features of the annealing (at temperatures as high as 800 deg. C) o...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2005-04, Vol.39 (4), p.385
Main Authors: Brudnyi, V.N., Grinyaev, S.N., Kolin, N.G.
Format: Article
Language:English
Subjects:
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRONIC STRUCTURE
ELECTRONS
FERMI LEVEL
INDIUM ARSENIDES
IRRADIATION
MATERIALS SCIENCE
MEV RANGE 01-10
OPTICAL PROPERTIES
POINT DEFECTS
RADIATION DOSES
SEMICONDUCTOR MATERIALS
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Summary:The results of experimental studies of the electrical and optical properties of n- and p-InAs crystals irradiated with electrons at an energy of {approx}2 MeV and doses as high as D = 1 x 10{sup 19} cm{sup -2} are reported. Specific features of the annealing (at temperatures as high as 800 deg. C) of radiation defects are also reported. The electronic structure of nonrelaxed V{sub As}, V{sub In}, As{sub In}, In{sub As} defects is calculated. A relation between the electrical properties and the Fermi level position in irradiated InAs on the one hand and the electronic structure of the intrinsic defects and special features of the energy-band spectrum of InAs on the other hand is discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1900249