Ferroelectric domain wall relaxation in Ba{sub 0.25}Sr{sub 0.75}TiO{sub 3} films displaying Curie-Weiss behavior

Ferroelectric films may be used in integrated circuits for high frequency and memory applications. Losses and interfaces between films and electrodes are problematic. This work concerns the temperature and electric field response of the complex dielectric permittivity and the relaxation of domain wa...

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Bibliographic Details
Published in:Journal of applied physics 2004-10, Vol.96 (8)
Main Authors: Boikov, Yu.A., Khamchane, K., Claeson, T., Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg
Format: Article
Language:English
Subjects:
ABLATION
BARIUM COMPOUNDS
CALCIUM COMPOUNDS
CAPACITORS
CURIE POINT
CURIE-WEISS LAW
EPITAXY
FERROELECTRIC MATERIALS
GRAIN BOUNDARIES
LANTHANUM COMPOUNDS
MANGANESE OXIDES
MATERIALS SCIENCE
MEV RANGE 10-100
MONOCRYSTALS
PERMITTIVITY
PHASE TRANSFORMATIONS
RELAXATION
RELAXATION TIME
STRONTIUM TITANATES
TEMPERATURE DEPENDENCE
THIN FILMS
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Summary:Ferroelectric films may be used in integrated circuits for high frequency and memory applications. Losses and interfaces between films and electrodes are problematic. This work concerns the temperature and electric field response of the complex dielectric permittivity and the relaxation of domain walls in a ferroelectric layer that is of sufficient quality to show a Curie-Weiss behavior. Laser ablation was used to deposit 1200 nm thick Ba{sub 0.25}Sr{sub 0.75}TiO{sub 3} layers between metallic oxide (100 nm) SrRuO{sub 3} and (120 nm) La{sub 0.67}Ca{sub 0.33}MnO{sub 3}, films in epitaxial heterostructures. The electric field response (E{
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1787587