Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595cm−1 m...

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Bibliographic Details
Published in:Journal of applied physics 2004-11, Vol.96 (9), p.4930-4934
Main Authors: Song, S. F., Chen, W. D., Zhang, Chunguang, Bian, Liufang, Hsu, C. C., Ma, Baoshan, Li, G. H., Zhu, Jianjun
Format: Article
Language:English
Subjects:
CHEMICAL VAPOR DEPOSITION
CRYSTALS
EPITAXY
ERBIUM IONS
GALLIUM NITRIDES
LAYERS
MATERIALS SCIENCE
METALS
NITROGEN
OXYGEN
PHOTOLUMINESCENCE
RAMAN EFFECT
RAMAN SPECTRA
SCATTERING
SEMICONDUCTOR MATERIALS
VACANCIES
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Summary:Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595cm−1 modes are attributed to the disorder-activated Raman scattering, whereas the 670cm−1 peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360cm−1 arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360cm−1 mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1792387