Rhenium ohmic contacts on 6H-SiC

Rhenium (Re) thin-film contacts (100-nm thick) were deposited on carbon-rich, nominally stoichiometric, and silicon-rich 6H–SiC surfaces, which were moderately doped with nitrogen (1.28×1018cm−3). Morphology (Dektak), phase formation (x-ray diffraction), chemistry (Auger electron spectroscopy), and...

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Bibliographic Details
Published in:Journal of applied physics 2004-11, Vol.96 (9), p.5357-5364
Main Authors: McDaniel, G. Y., Fenstermaker, S. T., Lampert, W. V., Holloway, P. H.
Format: Article
Language:English
Subjects:
ANNEALING
AUGER ELECTRON SPECTROSCOPY
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
GRAPHITE
INTERFACES
MATERIALS SCIENCE
MORPHOLOGY
NITROGEN
OXIDATION
RHENIUM
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STOICHIOMETRY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
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Summary:Rhenium (Re) thin-film contacts (100-nm thick) were deposited on carbon-rich, nominally stoichiometric, and silicon-rich 6H–SiC surfaces, which were moderately doped with nitrogen (1.28×1018cm−3). Morphology (Dektak), phase formation (x-ray diffraction), chemistry (Auger electron spectroscopy), and electrical properties (I–V) were characterized for the as-deposited and annealed (120min, 1000°C, vacuum
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1797550