Optical and magnetic properties of Mn+-implanted GaAs

• Published in: Journal of applied physics 2004-12, Vol.96 (12), p.7022-7028
• Main Authors: Shon, Yoon, Park, Y. S., Chung, K. J., Fu, D. J., Kim, D. Y., Kim, H. S., Kim, H. J., Kang, T. W., Kim, Yongmin, Fan, X. J., Park, Y. J.
• Format: Article
• Language: English
• Subjects: ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CURIE POINT; CZOCHRALSKI METHOD; DOPED MATERIALS; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; GERMANIUM; ION IMPLANTATION; MAGNETIC FIELDS; MAGNETIZATION; MANGANESE ARSENIDES; MANGANESE IONS; MATERIALS SCIENCE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1804227

Neutron-transmutation-doped GaAs samples were prepared by irradiating the middle-level neutrons into the semi-insulating GaAs grown by a liquid encapsulated Czochralski method and subsequently implanted with Mn+. The characteristics of the Mn+-implanted neutron-transmutation-doped GaAs (namely, the implantation of Mn+ subsequent to neutron-transmutation-doping) were investigated by various measurements. The result of the energy dispersive x-ray peak displayed an injected Mn concentration of 9.65%. The photoluminescence peaks related to carbon and germanium acceptors were resolved, and the peaks related to Mn due to a neutral Mn acceptor were evidently observed. It is found that the proper activation for the neutral Mn acceptor starts from a relatively low annealing temperature of 600°C for 15min. The atomic force microscopy and magnetic forcemicroscopy images showed that magnetic clusters were well formed. The ferromagnetic hysteresis loop measured at 10K was observed, and the temperature-dependent magnetization revealed that the two different phases exist at 135 and 360K. The Curie temperature (Tc∼360K) is caused by MnAs, which agrees with the clusters of the magnetic force microscopy image.