Thermally induced diffusion in GaInNAs∕GaAs and GaInAs∕GaAs quantum wells grown by solid source molecular beam epitaxy

The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAs∕GaInAs∕GaAs∕GaInNAs∕GaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that...

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Bibliographic Details
Published in:Journal of applied physics 2005-01, Vol.97 (1)
Main Authors: Ng, T. K., Djie, H. S., Yoon, S. F., Mei, T.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
ANNEALING
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERSTITIALS
MATERIALS SCIENCE
MILLI EV RANGE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM MECHANICS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SIMULATION
THERMAL DIFFUSION
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Summary:The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAs∕GaInAs∕GaAs∕GaInNAs∕GaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAs∕GaAs QW (ED,GIA) were found to be between 0.49to0.51eV, while that of GaInNAs∕GaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67eV, as annealing time increases from 10to30s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1825632