Current-induced chain migration in semiconductor polymer blends

We have used the technique of neutron reflectometry in order to evaluate the changes that occur within polymer light-emitting devices as they are operated. The devices examined consisted of an indium-tin-oxide, anode, a deuterated-poly(styrene sulfonate)/poly(3,4 ethylenedioxythiophene) (d-PSS/PEDT)...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-02, Vol.71 (8), p.081308.1-081308.4, Article 081308
Main Authors: MARTIN, S. J, JONES, R. A. L, GEOGHEGAN, M, HIGGINS, A. M, GRIZZI, I, HALLS, J. J. M, KIRCHMEYER, S, DALGLIESH, R. M
Format: Article
Language:English
Subjects:
ANODES
Applied sciences
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electronics
Exact sciences and technology
INDIUM COMPOUNDS
JOULE HEATING
LAYERS
LIGHT EMITTING DIODES
NEUTRONS
Optoelectronic devices
ORGANIC SEMICONDUCTORS
POLYMERS
SEGREGATION
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TIN OXIDES
WORK FUNCTIONS
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Summary:We have used the technique of neutron reflectometry in order to evaluate the changes that occur within polymer light-emitting devices as they are operated. The devices examined consisted of an indium-tin-oxide, anode, a deuterated-poly(styrene sulfonate)/poly(3,4 ethylenedioxythiophene) (d-PSS/PEDT), charge injection layer, poly(fluorene) (F8), and a low work-function cathode. We found clear evidence for segregation of d-PSS to the d-PSS:PEDT/F8 interface in a device driven until its brightness had fallen to 10% of its initial value. We suggest that this effect is due to Joule heating of the device during operation.
ISSN:1098-0121
1550-235X
DOI:10.1103/physrevb.71.081308