Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111)

Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first. The cubic stacking is enabled by nitrogen-induced polar surface stabilization, which yields a metallic MgO(111)-(1 x 1)-ON surface. High-re...

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Bibliographic Details
Published in:Physical review letters 2005-06, Vol.94 (21), p.216101.1-216101.4, Article 216101
Main Authors: LAZAROV, V. K, ZIMMERMAN, J, CHEUNG, S. H, LI, L, WEINERT, M, GAJDARDZISKA -JOSIFOVSKA, M
Format: Article
Language:English
Subjects:
ATOMS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
CRYSTAL GROWTH
DENSITY FUNCTIONAL METHOD
ELECTRIC DIPOLE MOMENTS
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
GALLIUM NITRIDES
GROUND STATES
INTERFACES
MAGNESIUM OXIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NITROGEN
Physics
SEMICONDUCTOR MATERIALS
STABILIZATION
Structure and morphology
thickness
SUBSTRATES
SURFACES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES
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Summary:Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first. The cubic stacking is enabled by nitrogen-induced polar surface stabilization, which yields a metallic MgO(111)-(1 x 1)-ON surface. High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site. This specific atomic arrangement at the interface allows the cubic stacking to more effectively screen the substrate and film electric dipole moment than the hexagonal stacking, thus stabilizing the zinc blende phase even though the wurtzite phase is the ground state in the bulk.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.94.216101