Morphological instability in InAs/GaSb superlattices due to interfacial bonds

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in...

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Bibliographic Details
Published in:Physical review letters 2005-08, Vol.95 (9), p.096104.1-096104.4, Article 096104
Main Authors: LI, J. H, STOKES, D. W, CAHA, O, AMMU, S. L, BAI, J, BASSLER, K. E, MOSS, S. C
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
EPITAXY
Exact sciences and technology
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
Interface structure and roughness
LAYERS
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
MATERIALS SCIENCE
NANOSTRUCTURES
Physics
SEMICONDUCTOR MATERIALS
Solid surfaces and solid-solid interfaces
STRAINS
STRESSES
SUPERLATTICES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
SYNCHROTRON RADIATION
X-RAY DIFFRACTION
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Summary:Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.95.096104