Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping

A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance Rs occurred in the postactivation annealing temperature range of 400°C–480°C after PLAD. The Rs of 30Ω∕sq. and the junction depth Xj of 30nm was obtained without t...

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Bibliographic Details
Published in:Applied physics letters 2005-05, Vol.86 (19)
Main Authors: Baek, Sungkweon, Hwang, Hyunsang, Im, Kiju, Ahn, Chang-Geun, Yang, Jong-Heon, Baek, In-Bok, Lee, Seongjae, Cho, Won-ju
Format: Article
Language:English
Subjects:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ANNEALING
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIFFUSION
ELECTRIC CONDUCTIVITY
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
JUNCTION DIODES
MATERIALS SCIENCE
P-N JUNCTIONS
PLASMA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
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Summary:A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance Rs occurred in the postactivation annealing temperature range of 400°C–480°C after PLAD. The Rs of 30Ω∕sq. and the junction depth Xj of 30nm was obtained without the additional diffusion of a dopant from the postactivation annealing in the fabricated junction. The electrical characteristics of a n+-p junction diode fabricated by PLAD were also improved after low-temperature postannealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1923758