Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

We propose a method to improve accurate determination of damage/impurity depth profiles by channeling Rutherford backscattering by using He+4 beams in an energy window of 400–800 keV. This is based on the study of the stopping power of He+4 ions as a function of incident energy along the Si ⟨100⟩ ax...

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Bibliographic Details
Published in:Applied physics letters 2005-05, Vol.86 (22)
Main Authors: Shao, Lin, Wang, Y. Q., Zhang, X., Wetteland, C. J., Nastasi, M., Thompson, P. E., Mayer, J. W.
Format: Article
Language:English
Subjects:
ANTIMONY
CHANNELING
DOPED MATERIALS
ERRORS
HELIUM 4 BEAMS
HELIUM IONS
IMPURITIES
KEV RANGE 100-1000
MATERIALS SCIENCE
MEV RANGE 01-10
RANDOMNESS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
STOPPING POWER
SUPERLATTICES
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Summary:We propose a method to improve accurate determination of damage/impurity depth profiles by channeling Rutherford backscattering by using He+4 beams in an energy window of 400–800 keV. This is based on the study of the stopping power of He+4 ions as a function of incident energy along the Si ⟨100⟩ axis, which shows that the channeling stopping power within the above energy window is close to the random stopping power. Experiments on 100 nm deep Sb-doped Si superlattices show that the approach significantly reduces the error in determining the depth location of Sb, for example, from 8% by using 2-MeV He+4 to 1% by using 600-keV He+4 ions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1941454