Mechanism of lateral ordering of InP dots grown on InGaP layers

The mechanisms leading to the spontaneous formation of a two-dimensional array of In P ∕ In Ga P dots grown by chemical-beam epitaxy are discussed. Samples where the InGaP buffer layer was grown at different conditions were characterized by transmission electron microscopy. Our results indicate that...

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Bibliographic Details
Published in:Applied physics letters 2005-07, Vol.87 (1), p.013105-013105-3
Main Authors: Bortoleto, J. R. R., Gutiérrez, H. R., Cotta, M. A., Bettini, J.
Format: Article
Language:English
Subjects:
BUFFERS
CRYSTAL GROWTH
EPITAXY
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
LAYERS
MATERIALS SCIENCE
OPTICAL PROPERTIES
PERIODICITY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:The mechanisms leading to the spontaneous formation of a two-dimensional array of In P ∕ In Ga P dots grown by chemical-beam epitaxy are discussed. Samples where the InGaP buffer layer was grown at different conditions were characterized by transmission electron microscopy. Our results indicate that a periodic strain field related to lateral two-dimensional compositional modulation in the InGaP buffer layer determines the dot nucleation positions during InP growth. Although the periodic strain field in the InGaP is large enough to align the InP dots, both their shape and optical properties are effectively unaltered. This result shows that compositional modulation can be used as a tool for in situ dot positioning.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1953875