Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation

We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a Zr B 2 ( 0001 ) buffer layer. The method utilizes the decomposition of a single gas-source precursor ( D 2 Ga N 3 ) 3 on the substrate surface to form GaN. The film growth process is further promoted by ir...

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Bibliographic Details
Published in:Applied physics letters 2005-08, Vol.87 (7), p.072107-072107-3
Main Authors: Trivedi, R. A., Tolle, J., Chizmeshya, A. V. G., Roucka, R., Ritter, Cole, Kouvetakis, J., Tsong, I. S. T.
Format: Article
Language:English
Subjects:
BUFFERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DECOMPOSITION
EPITAXY
EV RANGE 01-10
EXCITATION
GALLIUM NITRIDES
IRRADIATION
LAYERS
MATERIALS SCIENCE
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0400-1000 K
ULTRAVIOLET RADIATION
ZIRCONIUM BORIDES
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Summary:We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a Zr B 2 ( 0001 ) buffer layer. The method utilizes the decomposition of a single gas-source precursor ( D 2 Ga N 3 ) 3 on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of 550 ° C with a growth rate of 3 nm ∕ min . The films exhibit intense photoluminescence emission at 10 K with a single peak at 3.48 eV , indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on Zr B 2 in contrast to conventional metalorganic chemical vapor deposition based approaches.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2012519