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Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation
We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a Zr B 2 ( 0001 ) buffer layer. The method utilizes the decomposition of a single gas-source precursor ( D 2 Ga N 3 ) 3 on the substrate surface to form GaN. The film growth process is further promoted by ir...
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| Published in: | Applied physics letters 2005-08, Vol.87 (7), p.072107-072107-3 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c311t-db23a8ca092f516799d10ea1d43892597668a0c223367a1e7e566e1d51b38abc3 |
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| cites | cdi_FETCH-LOGICAL-c311t-db23a8ca092f516799d10ea1d43892597668a0c223367a1e7e566e1d51b38abc3 |
| container_end_page | 072107-3 |
| container_issue | 7 |
| container_start_page | 072107 |
| container_title | Applied physics letters |
| container_volume | 87 |
| creator | Trivedi, R. A. Tolle, J. Chizmeshya, A. V. G. Roucka, R. Ritter, Cole Kouvetakis, J. Tsong, I. S. T. |
| description | We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a
Zr
B
2
(
0001
)
buffer layer. The method utilizes the decomposition of a single gas-source precursor
(
D
2
Ga
N
3
)
3
on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of
550
°
C
with a growth rate of
3
nm
∕
min
. The films exhibit intense photoluminescence emission at
10
K
with a single peak at
3.48
eV
, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on
Zr
B
2
in contrast to conventional metalorganic chemical vapor deposition based approaches. |
| doi_str_mv | 10.1063/1.2012519 |
| format | article |
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Zr
B
2
(
0001
)
buffer layer. The method utilizes the decomposition of a single gas-source precursor
(
D
2
Ga
N
3
)
3
on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of
550
°
C
with a growth rate of
3
nm
∕
min
. The films exhibit intense photoluminescence emission at
10
K
with a single peak at
3.48
eV
, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on
Zr
B
2
in contrast to conventional metalorganic chemical vapor deposition based approaches.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2012519</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>BUFFERS ; CHEMICAL VAPOR DEPOSITION ; CRYSTAL GROWTH ; DECOMPOSITION ; EPITAXY ; EV RANGE 01-10 ; EXCITATION ; GALLIUM NITRIDES ; IRRADIATION ; LAYERS ; MATERIALS SCIENCE ; PHOTOLUMINESCENCE ; SEMICONDUCTOR MATERIALS ; SILICON ; SUBSTRATES ; SURFACES ; TEMPERATURE RANGE 0000-0013 K ; TEMPERATURE RANGE 0400-1000 K ; ULTRAVIOLET RADIATION ; ZIRCONIUM BORIDES</subject><ispartof>Applied physics letters, 2005-08, Vol.87 (7), p.072107-072107-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-db23a8ca092f516799d10ea1d43892597668a0c223367a1e7e566e1d51b38abc3</citedby><cites>FETCH-LOGICAL-c311t-db23a8ca092f516799d10ea1d43892597668a0c223367a1e7e566e1d51b38abc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2012519$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27922,27923,76153</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20702595$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Trivedi, R. A.</creatorcontrib><creatorcontrib>Tolle, J.</creatorcontrib><creatorcontrib>Chizmeshya, A. V. G.</creatorcontrib><creatorcontrib>Roucka, R.</creatorcontrib><creatorcontrib>Ritter, Cole</creatorcontrib><creatorcontrib>Kouvetakis, J.</creatorcontrib><creatorcontrib>Tsong, I. S. T.</creatorcontrib><title>Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation</title><title>Applied physics letters</title><description>We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a
Zr
B
2
(
0001
)
buffer layer. The method utilizes the decomposition of a single gas-source precursor
(
D
2
Ga
N
3
)
3
on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of
550
°
C
with a growth rate of
3
nm
∕
min
. The films exhibit intense photoluminescence emission at
10
K
with a single peak at
3.48
eV
, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on
Zr
B
2
in contrast to conventional metalorganic chemical vapor deposition based approaches.</description><subject>BUFFERS</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL GROWTH</subject><subject>DECOMPOSITION</subject><subject>EPITAXY</subject><subject>EV RANGE 01-10</subject><subject>EXCITATION</subject><subject>GALLIUM NITRIDES</subject><subject>IRRADIATION</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOLUMINESCENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>TEMPERATURE RANGE 0000-0013 K</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>ULTRAVIOLET RADIATION</subject><subject>ZIRCONIUM BORIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKsH3yDgyUNqJjHZ3YMHKVqFohc9h2x22q60myVJafv2TWkFL56GGT5m_vkIuQU-Aq7lA4wEB6GgOiMD4EXBJEB5Tgacc8l0peCSXMX4k1slpByQeuo3LOGqx2DTOiCd2A86D36TFtR3NLbL1h3quo4pExhpvcvTbr5EOreRRb8ODin2bbLbHbVdQ_uFT57h1uVRan13TS5mdhnx5lSH5Pv15Wv8xqafk_fx85S5nDGxphbSls7ySswU6KKqGuBooXmUZSVUVWhdWu5Ejq0LC1ig0hqhUVDL0tZODsndca-PqTUxn0e3yOE7dMkIXvC8RGXq_ki54GMMODN9aFc27Axwc1BowJwUZvbpyMbfX_6Hs0fzx6PJHuUeU614cw</recordid><startdate>20050815</startdate><enddate>20050815</enddate><creator>Trivedi, R. A.</creator><creator>Tolle, J.</creator><creator>Chizmeshya, A. V. G.</creator><creator>Roucka, R.</creator><creator>Ritter, Cole</creator><creator>Kouvetakis, J.</creator><creator>Tsong, I. S. T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20050815</creationdate><title>Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation</title><author>Trivedi, R. A. ; Tolle, J. ; Chizmeshya, A. V. G. ; Roucka, R. ; Ritter, Cole ; Kouvetakis, J. ; Tsong, I. S. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-db23a8ca092f516799d10ea1d43892597668a0c223367a1e7e566e1d51b38abc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BUFFERS</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL GROWTH</topic><topic>DECOMPOSITION</topic><topic>EPITAXY</topic><topic>EV RANGE 01-10</topic><topic>EXCITATION</topic><topic>GALLIUM NITRIDES</topic><topic>IRRADIATION</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTOLUMINESCENCE</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>TEMPERATURE RANGE 0000-0013 K</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>ULTRAVIOLET RADIATION</topic><topic>ZIRCONIUM BORIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Trivedi, R. A.</creatorcontrib><creatorcontrib>Tolle, J.</creatorcontrib><creatorcontrib>Chizmeshya, A. V. G.</creatorcontrib><creatorcontrib>Roucka, R.</creatorcontrib><creatorcontrib>Ritter, Cole</creatorcontrib><creatorcontrib>Kouvetakis, J.</creatorcontrib><creatorcontrib>Tsong, I. S. T.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Trivedi, R. A.</au><au>Tolle, J.</au><au>Chizmeshya, A. V. G.</au><au>Roucka, R.</au><au>Ritter, Cole</au><au>Kouvetakis, J.</au><au>Tsong, I. S. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation</atitle><jtitle>Applied physics letters</jtitle><date>2005-08-15</date><risdate>2005</risdate><volume>87</volume><issue>7</issue><spage>072107</spage><epage>072107-3</epage><pages>072107-072107-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report a unique low-temperature growth method for epitaxial GaN on Si(111) substrates via a
Zr
B
2
(
0001
)
buffer layer. The method utilizes the decomposition of a single gas-source precursor
(
D
2
Ga
N
3
)
3
on the substrate surface to form GaN. The film growth process is further promoted by irradiation of ultraviolet light to enhance the growth rate and ordering of the film. The best epitaxial film quality is achieved at a growth temperature of
550
°
C
with a growth rate of
3
nm
∕
min
. The films exhibit intense photoluminescence emission at
10
K
with a single peak at
3.48
eV
, indicative of band-edge emission for a single-phase hexagonal GaN film. The growth process achieved in this study is compatible with low Si processing temperatures and also enables direct epitaxy of GaN on
Zr
B
2
in contrast to conventional metalorganic chemical vapor deposition based approaches.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2012519</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-08, Vol.87 (7), p.072107-072107-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20702595 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
| subjects | BUFFERS CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH DECOMPOSITION EPITAXY EV RANGE 01-10 EXCITATION GALLIUM NITRIDES IRRADIATION LAYERS MATERIALS SCIENCE PHOTOLUMINESCENCE SEMICONDUCTOR MATERIALS SILICON SUBSTRATES SURFACES TEMPERATURE RANGE 0000-0013 K TEMPERATURE RANGE 0400-1000 K ULTRAVIOLET RADIATION ZIRCONIUM BORIDES |
| title | Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation |
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