Microwave-cut silicon layer transfer

Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low...

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Bibliographic Details
Published in:Applied physics letters 2005-11, Vol.87 (22), p.224103-224103-3
Main Authors: Thompson, D. C., Alford, T. L., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., Theodore, N. David, Henttinen, K., Suni, llkka, Chu, Paul K.
Format: Article
Language:English
Subjects:
ANNEALING
ATOMIC FORCE MICROSCOPY
ELECTRICAL PROPERTIES
GHZ RANGE 01-100
HALL EFFECT
ION BEAMS
LAYERS
MATERIALS SCIENCE
MICROWAVE HEATING
MICROWAVE RADIATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2135395