Growth of highly oriented HfO{sub 2} thin films of monoclinic phase on yttrium-stabilized ZrO{sub 2} and Si substrates by pulsed-laser deposition

We report on the growth of highly oriented HfO{sub 2} thin films of monoclinic phase stabilized by 5% Co doping on (001) yttrium-stabilized zirconia (YSZ) using pulsed-laser deposition at 700 deg. C at an oxygen partial pressure of 10{sup -4} Torr. On the other hand, pure HfO{sub 2} of such quality...

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Bibliographic Details
Published in:Applied physics letters 2005-12, Vol.87 (24)
Main Authors: Dhar, S., Ramachandra Rao, M.S., Ogale, S.B., Kundaliya, Darshan C., Shinde, S.R., Venkatesan, T., Welz, S.J., Erni, R., Browning, N.D., Department of Chemical Engineering and Materials Science, University of California at Davis, California 95616, Lawrence Berkeley National Laboratory, NCEM, One Cyclotron Road, Berkeley, California 94720
Format: Article
Language:English
Subjects:
COBALT
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
ENERGY-LOSS SPECTROSCOPY
HAFNIUM OXIDES
ION CHANNELING
LASER RADIATION
MATERIALS SCIENCE
MONOCLINIC LATTICES
OXYGEN
PARTIAL PRESSURE
PRESSURE RANGE MILLI PA
PULSED IRRADIATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
YTTRIUM COMPOUNDS
ZIRCONIUM OXIDES
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Summary:We report on the growth of highly oriented HfO{sub 2} thin films of monoclinic phase stabilized by 5% Co doping on (001) yttrium-stabilized zirconia (YSZ) using pulsed-laser deposition at 700 deg. C at an oxygen partial pressure of 10{sup -4} Torr. On the other hand, pure HfO{sub 2} of such quality did not grow on YSZ in wide range of growth parameters. Rutherford backscattering-ion channeling in this film showed a 24% minimum yield ({chi}{sub min}) indicating highly oriented film growth, while hardly any ion channeling was observed in the undoped sample. High-resolution transmission electron microscopy revealed a sharp interface, and no signature of Co clusters. Electron energy loss spectroscopy showed that Co is in the 2+ state. Attempts were also made to grow films on a (001) Si substrate, and the results showed a very low ion channeling yield ({approx}8%)
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2142088