Soft magnetic granular material Co–Fe–Hf–O for micromagnetic device applications

A granular magnetic material, Co–Fe–Hf–O, has been developed-using dc pulsed magnetron reactive sputtering. The deposition rate is as high as 1.3nm∕s. The electrical and magnetic properties of Co–Fe–Hf–O film can be tuned by changing O2 during deposition. A highly resistive, magnetically soft film h...

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Bibliographic Details
Published in:Journal of applied physics 2005-05, Vol.97 (10)
Main Authors: Li, Liangliang, Crawford, Ankur M., Wang, Shan X., Marshall, Ann F., Mao, Ming, Schneider, Thomas, Bubber, Randhir
Format: Article
Language:English
Subjects:
ANISOTROPY
ARGON
COBALT COMPOUNDS
COERCIVE FORCE
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
FERROMAGNETIC MATERIALS
GAS FLOW
GRANULAR MATERIALS
HAFNIUM COMPOUNDS
HYSTERESIS
IRON COMPOUNDS
MAGNETIC PROPERTIES
MATERIALS SCIENCE
MICROSTRUCTURE
OXYGEN
SPUTTERING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
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Summary:A granular magnetic material, Co–Fe–Hf–O, has been developed-using dc pulsed magnetron reactive sputtering. The deposition rate is as high as 1.3nm∕s. The electrical and magnetic properties of Co–Fe–Hf–O film can be tuned by changing O2 during deposition. A highly resistive, magnetically soft film has been achieved in a small range of the O2∕(Ar+O2) gas flow ratio. The origin of the dependence of magnetic and electrical properties of this material is studied and explained by monitoring the evolution of the film microstructure, using x-ray diffraction and transmission electron microscopy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1853238