Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles

FePt and CoPt particles have been directly deposited on Si 3 N 4 substrate by ion-beam-induced chemical-vapor deposition (IBICVD) with a focused ion-beam system. The as-deposited FePt particles are amorphous and crystallize into fcc structure after annealing at 600 ° C . The as-deposited CoPt partic...

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Bibliographic Details
Published in:Journal of applied physics 2005-05, Vol.97 (10), p.10K308-10K308-3
Main Authors: Xu, Q. Y., Kageyama, Y., Suzuki, T.
Format: Article
Language:English
Subjects:
ANNEALING
ATOMIC FORCE MICROSCOPY
BINARY ALLOY SYSTEMS
CHEMICAL VAPOR DEPOSITION
COBALT ALLOYS
CRYSTALLIZATION
FABRICATION
FCC LATTICES
FERROMAGNETIC MATERIALS
ION BEAMS
IRON ALLOYS
MAGNETIC FIELDS
MAGNETIZATION
MATERIALS SCIENCE
NANOSTRUCTURES
PARTICLES
PLATINUM ALLOYS
SILICON NITRIDES
SUBSTRATES
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Summary:FePt and CoPt particles have been directly deposited on Si 3 N 4 substrate by ion-beam-induced chemical-vapor deposition (IBICVD) with a focused ion-beam system. The as-deposited FePt particles are amorphous and crystallize into fcc structure after annealing at 600 ° C . The as-deposited CoPt particles and the CoPt particles annealed at 600 ° C are both in fcc structure, but annealing improves the crystallization of the CoPt particles. After applying a 20 - kOe magnetic field perpendicular to the Si 3 N 4 substrate, the magnetic force microscopy images of annealed FePt and CoPt particles both show concentric domain patterns, implying the alternately up- and downward perpendicular components of magnetizations. The successful fabrication of FePt and CoPt particles may lead to the potential application of IBICVD for nanoparticles and clusters which have not been synthesized yet.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1851875