Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC (0001)

Electrical behavior of implanted Al and B near implant-tail region in 4H-SiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by secondary-ion-mass...

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Bibliographic Details
Published in:Journal of applied physics 2005-08, Vol.98 (4), p.043709-043709-7
Main Authors: Negoro, Y., Kimoto, T., Matsunami, H.
Format: Article
Language:English
Subjects:
ALUMINIUM IONS
ANNEALING
BORON IONS
CAPACITANCE
CARBON IONS
DIFFUSION
ELECTRIC POTENTIAL
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE RANGE 1000-4000 K
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Summary:Electrical behavior of implanted Al and B near implant-tail region in 4H-SiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by secondary-ion-mass spectrometry. For Al + (aluminum-ion) implantation, slight in-diffusion of Al implants occurred in the initial stage of annealing at 1700 ° C . The profile of the Al-acceptor concentration in a "box-profile" region as well as an "implant-tail" region is in good agreement with that of the Al-atom concentration, indicating that nearly all of the implanted Al atoms, including the in-diffused Al atoms, work as Al acceptors. Several electrically deep centers were formed by Al + implantation. For B + (boron-ion) implantation, significant out- and in-diffusion of B implants occurred in the initial stage of annealing at 1700 ° C . A high density of B-related D centers exists near the tail region. In the tail region, the sum of B-acceptor concentration and D -center concentration corresponds to the B-atom concentration. C + (carbon-ion) coimplantation with a ten times higher dose than B + effectively suppressed the B diffusion, but additional deep centers were introduced by C + coimplantation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2030411