Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements...

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Bibliographic Details
Published in:Journal of applied physics 2005-10, Vol.98 (7), p.073502-073502-6
Main Authors: Heo, Y. W., Norton, D. P., Pearton, S. J.
Format: Article
Language:English
Subjects:
CARRIER DENSITY
CRYSTAL GROWTH
HALL EFFECT
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OXYGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
THIN FILMS
VACANCIES
ZINC
ZINC OXIDES
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Summary:The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy V Zn − ) and the yellow to donor-deep acceptor (oxygen vacancy, O i − ).
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2064308