The role of the chemical nature of implanted species on quenching and recovery of photoluminescence in ion-irradiated porous silicon

The effects of ion irradiation on porous Si (po-Si) photoluminescence (PL) have been investigated. Specimens were progressively irradiated with H+ and He+ ions followed by PL measurements. After the final irradiation, which resulted in total PL quenching, PL recovery was monitored for more than 200...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2005-10, Vol.98 (7)
Main Authors: Jacobsohn, L. G., Cooke, D. W., Bennett, B. L., Muenchausen, R. E., Nastasi, M.
Format: Article
Language:English
Subjects:
CHANNELING
CRYSTAL DEFECTS
HELIUM IONS
HYDROGEN IONS 1 PLUS
ION BEAMS
IRRADIATION
MATERIALS SCIENCE
PASSIVATION
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POROUS MATERIALS
QUENCHING
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of ion irradiation on porous Si (po-Si) photoluminescence (PL) have been investigated. Specimens were progressively irradiated with H+ and He+ ions followed by PL measurements. After the final irradiation, which resulted in total PL quenching, PL recovery was monitored for more than 200 days. The behavior of both PL quenching and recovery was correlated to the amount of retained irradiation-induced damage, determined by channeling spectrometry measurements, and to the chemical nature of the implanted species. Quenching was attributed to the generation of defects that create nonradiative states within the gap, while recovery was attributed to the passivation of these defects by atmospheric exposure. H+ irradiation is approximately five times more efficient in quenching PL and leads to approximately four times lower recovery rate than He+ irradiation. This behavior is attributed to the formation of stable H-defect complexes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2081118