The effect of neutron irradiation on the properties of n-InSb whisker microcrystals

The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n{sup +}-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2005-01, Vol.39 (7), p.780-785
Main Authors: Bolshakova, I. A., Boiko, V. M., Brudnyi, V. N., Kamenskaya, I. V., Kolin, N. G., Makido, E. Yu, Moskovets, T. A., Merkurisov, D. I.
Format: Article
Language:English
Subjects:
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRONS
FAST NEUTRONS
IBR-2 REACTOR
IMPURITIES
INDIUM ANTIMONIDES
IRRADIATION
MAGNETIC FIELDS
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
TRANSMUTATION
WHISKERS
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Summary:The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n{sup +}-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated (n {approx_equal} (6-7) x 10{sup 17} cm{sup -3}). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation (transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n{sup +}-InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately.
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1992633