Surface Wave Metrology for Copper/Low-k Interconnects

We review recent advances in the application of laser-induced surface acoustic wave metrology to issues in copper/low-k interconnect development and manufacturing. We illustrate how the metrology technique can be used to measure copper thickness uniformity on a range of features from solid pads to a...

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Bibliographic Details
Published in:AIP conference proceedings 2005-01, Vol.788 (1)
Main Authors: Gostein, M., Maznev, A.A., Mazurenko, A., Tower, J.
Format: Article
Language:English
Subjects:
ANISOTROPY
CHEMICAL POLISHING
COPPER
DIELECTRIC MATERIALS
ELECTRODEPOSITION
INTEGRATED CIRCUITS
MATERIALS SCIENCE
MECHANICAL POLISHING
POROUS MATERIALS
THICKNESS
THIN FILMS
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Summary:We review recent advances in the application of laser-induced surface acoustic wave metrology to issues in copper/low-k interconnect development and manufacturing. We illustrate how the metrology technique can be used to measure copper thickness uniformity on a range of features from solid pads to arrays of lines, focusing on specific processing issues in copper electrochemical deposition (ECD) and chemical-mechanical polishing (CMP). In addition, we review recent developments in surface wave metrology for the characterization of low-k dielectric elastic modulus, including the ability to measure within-wafer uniformity of elastic modulus and to characterize porous, anisotropic films.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2063009