Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation

Brittle fracture dynamics for three low-index crack surfaces, i.e., (110), (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fra...

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Bibliographic Details
Published in:Journal of applied physics 2005-11, Vol.98 (10), p.103524-103524-4
Main Authors: Kikuchi, Hideaki, Kalia, Rajiv K., Nakano, Aiichiro, Vashishta, Priya, Branicio, Paulo S., Shimojo, Fuyuki
Format: Article
Language:English
Subjects:
CLEAVAGE
CRACKS
FRACTURE MECHANICS
FRACTURE PROPERTIES
FRACTURES
MATERIALS SCIENCE
MOLECULAR DYNAMICS METHOD
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SIMULATION
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Summary:Brittle fracture dynamics for three low-index crack surfaces, i.e., (110), (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fracture involves slip in the { 11 1 ¯ } planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and ab initio calculation data.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2135896