Increased O ( D 1 ) metastable density in highly Ar-diluted oxygen plasmas

Enhancement of the growth rate of Si O 2 with a rare gas diluted O 2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom ( D 1 ) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption sp...

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Bibliographic Details
Published in:Applied physics letters 2006-02, Vol.88 (9), p.091501-091501-3
Main Authors: Kitajima, Takeshi, Nakano, Toshiki, Makabe, Toshiaki
Format: Article
Language:English
Subjects:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ABSORPTION SPECTROSCOPY
ARGON
CRYSTAL GROWTH
DILUTION
DISSOCIATION
ELECTRON DENSITY
FABRICATION
METASTABLE STATES
MICROELECTRONICS
OXYGEN
PLASMA
PLASMA DENSITY
PLASMA DIAGNOSTICS
SILICON OXIDES
ULTRAVIOLET RADIATION
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Summary:Enhancement of the growth rate of Si O 2 with a rare gas diluted O 2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom ( D 1 ) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O ( D 1 ) and found a twofold increase in the density of O ( D 1 ) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O 2 fractions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2180871