p -type activation of AlGaN by hydrogen desorption using catalytic Ni films

p -type activation of Mg-doped Al 0.03 Ga 0.97 N and Al 0.08 Ga 0.92 N by annealing process with Ni deposition has been investigated. Hole concentrations in both Al 0.03 Ga 0.97 N and Al 0.08 Ga 0.92 N by annealing at around 700 ° C with Ni were almost two times as high as those in samples annealed...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (15), p.152114-152114-3
Main Authors: Naono, T., Fujioka, H., Okabayashi, J., Oshima, M., Miki, H.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
ANNEALING
CHEMICAL VAPOR DEPOSITION
DESORPTION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM COMPOUNDS
HYDROGEN
ION MICROPROBE ANALYSIS
MAGNESIUM
MASS SPECTROSCOPY
MATERIALS SCIENCE
NICKEL
NITROGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
THIN FILMS
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Summary:p -type activation of Mg-doped Al 0.03 Ga 0.97 N and Al 0.08 Ga 0.92 N by annealing process with Ni deposition has been investigated. Hole concentrations in both Al 0.03 Ga 0.97 N and Al 0.08 Ga 0.92 N by annealing at around 700 ° C with Ni were almost two times as high as those in samples annealed without Ni. Secondary ion mass spectroscopy has revealed that hydrogen concentrations in AlGaN annealed with Ni are lower than those without Ni. Thermal desorption spectroscopy showed drastic enhancement in hydrogen desorption at around 450 ° C from AlGaN films with Ni. We conclude that Ni deposition promotes the hydrogen desorption from AlGaN layers, resulting in effective p -type activation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2191827