Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matri...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (15)
Main Authors: Fissel, A., Kühne, D., Bugiel, E., Osten, H. J.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
FABRICATION
GADOLINIUM OXIDES
INTERFACES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SILICON
VAPOR PHASE EPITAXY
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Summary:We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2O3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2192979